Heterojunction technology
Our focus is on heterojunction technology, which has proven to be the most effective in capturing and converting sunlight into electrical energy.
up to 25%
The highest heterojunction PV cells efficiency up to 25% ensures the highest modules nominal power output.
up to 95%
Ultra High bifaciality allows to increase electricity generation from back module side which provides shorter payback periods.
- 0.26% / °C
Low temperature coefficient leads to minimal power output losses in hot temperature conditions that enable to maximize energy yield.
down to 7cm
Small thickness of the cell allows to reach extremely low bending radius for unique product design.
HJT technology advantages
Our HJT cells provide more yield and power of the modules.
The efficiency of HJT technology is expected to rise to 26−27% in a couple of years and exceed 30% combining with tandem technology in the long term.
High bifaciality factor of cells: up to 95%.
Benefits additional module yield: up to 2,2% compared to TOPCon and up to 4,6% compared to PERC. 1
Benefits additional module yield: up to 2,2% compared to TOPCon and up to 4,6% compared to PERC. 1
Outstanding power temperature coefficient: — 0,26%/˚C (vs. 0.29−0.36%/˚C for mass market).
Extra yield for modules up to 1,6% compared to TOPCon and up to 4% compared to PERC due to module heating 2 caused by the following conditions:
Extra yield for modules up to 1,6% compared to TOPCon and up to 4% compared to PERC due to module heating 2 caused by the following conditions:
- under direct sunlight at noon
- complicated heat sink (rooftop, BIPV)
- using with trackers
- in hot climate
Lower current of HJT cells decrease resistivity losses of the modules and entire solar systems by 16,7% in comparison with TOPCon. 3
N-type cells with extra low PID and LID degradation leads to minimal module degradation rate: 0,25 — 0,375%/year. 4
Perfect performance in the diffuse and low lighting conditions.
Better flexibility and lower PV cell weight in comparison with PERC, TOPCon and xBC technologies due to thinner PV cell.
- Compared 90% HJT Bi-Fi factor with 80% for TOPCon and with 70% for PERC under 400 W/sq.m for back side of the module.
- Compared with -0,3 %/°C coefficient for TOPCon and -0,36 %/°C for PERC under 65°C constant temperature of the modules.
- Compared M10 nominal current of 13,3 A for TOPCon and 12,14 A for Sunqar PV HJT cells.
- Depends on BOM materials of PV module.
PV cell overview
Main features description
Great passivation due to
uc- Si layers
uc- Si layers
Increased transparency of intermediate silicon layers
Enhanced textured cell surface
Decreased optical losses and cell cost due to SMBB and 0BB design
The effienciecy uo to 25% based on HJT technology
N-type close to zero PID and LID degradation rates
Contact us
We are here to assist you.
E-mail
info@sunqarpv.kz
sales@sunqarpv.kz
Address
223/6 Sogrinskaya st., Ust-Kamenogorsk,
Kazakhstan, 070017
info@sunqarpv.kz
sales@sunqarpv.kz
Address
223/6 Sogrinskaya st., Ust-Kamenogorsk,
Kazakhstan, 070017